High Power Insulated-gate Bipolar Transistor (IGBT) Drivers: Design and Applications - Zhiyuan, He, PhD (China Electric Power Research Institute Co., Ltd, China) - Books - Elsevier - Health Sciences Division - 9780443526558 - November 1, 2026
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Zhiyuan, He, PhD (China Electric Power Research Institute Co., Ltd, China)
High Power Insulated-gate Bipolar Transistor (IGBT) Drivers: Design and Applications

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Expected delivery Nov 9 - 12, 2026
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Media Books     Paperback Book   (Book with soft cover and glued back)
To be released November 1, 2026
ISBN13 9780443526558
Publishers Elsevier - Health Sciences Division
Pages 500
Dimensions 150 × 220 × 10 mm   ·   450 g

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