GaP Heteroepitaxy on Si (100): Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients - Springer Theses - Henning Doescher - Books - Springer International Publishing AG - 9783319028798 - December 11, 2013
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Henning Doescher
GaP Heteroepitaxy on Si (100): Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients - Springer Theses 2013 edition

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Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.

157 pages, 47 black & white illustrations, 33 colour illustrations, biography

Media Books     Hardcover Book   (Book with hard spine and cover)
Released December 11, 2013
ISBN13 9783319028798
Publishers Springer International Publishing AG
Pages 143
Dimensions 155 × 235 × 13 mm   ·   362 g
Language English  

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