Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties - Engineering Materials - Hamid Bentarzi - Books - Springer-Verlag Berlin and Heidelberg Gm - 9783642266881 - February 25, 2013
In case cover and title do not match, the title is correct

Hamid Bentarzi
Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties - Engineering Materials 2011 edition

Price
$ 105.49
excl. VAT

Ordered from remote warehouse

Expected to be ready for shipping Jul 23 - 29
Get notified about new Hamid Bentarzi releases

Our customers say:

14-day return policy in accordance with European consumer protection law
Top ranking on Trustpilot
Add to your iMusic wish list

Not rated yet

Also available as:

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure.

120 pages, 10 black & white tables, biography

Media Books     Paperback Book   (Book with soft cover and glued back)
Released February 25, 2013
ISBN13 9783642266881
Publishers Springer-Verlag Berlin and Heidelberg Gm
Pages 106
Dimensions 155 × 235 × 6 mm   ·   176 g
Language English  

More from the same publisher

See all of Hamid Bentarzi ( e.g. Hardcover Book and Paperback Book )